Los Alamos National Laboratory
Nanotechnology and Advanced Spectroscopy Team

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Don Werder

Don Werder

Phone: 505-667-0022
Email: dwerder@lanl.gov

Professional Career

  • 2003 - present: Technical Staff Member, Los Alamos National Laboratory, Los Alamos, NM
  • 1985 - 2002: Member of Technical Staff, Bell Laboratories, Murray Hill, NJ
  • 1981 - 1985: Senior Technical Associate, Bell Laboratories, Murray Hill, NJ


  • 1985: MS, Materials Science, Stevens Institute of Technology, Hoboken, NJ
  • 1981: BS, Chemical Physics, Rutgers University, New Brunswick, NJ

Current Research

  • Characterization of phase, structure and composition of nanoscale materials by transmission electron microscopy and scanning transmission electron¬† microscopy.
  • Fabrication and characterization of nanoscale-based devices.
  • Thin-film deposition by thermal evaporation and RF magnetron sputtering.
  • I am also the person in charge of the TEM and cleanroom facilities. I am presently constructing a dedicated device characterization lab.

Previous Research

  • Photolithography, metrology and molecular beam epitaxy of InP-based, high-speed, bipolar transistors.
  • Transmission electron microscopy of high-temperature superconductors.
  • Studies of oxygen vacancy ordering in YBaCuO.
  • Transmission electron microscopy studies in the development of new bonding metals for flip-chip technologies. Studies of meta-stable alloy phases.
  • Transmission electron microscopy studies for the development alternative gate oxides.
  • Scanning transmission electron microscopy/molecular beam epitaxy in-situ studies of strained layer epitaxy.
  • Transmission electron microscopy studies of AlGaAs/GaAs quantum wells fabricated by ion-implantation and diffusion.
  • Reflection electron microscopy studies of disorder in the contact resistance of oxidized Ni and Ni-Sb films.
  • Development of plasma etching process of GaAs-based lasers produced by proton bombardment.

August 2010

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